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| NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built-In Base-Emitter Shunt Resistor D Junction Temperature to +200C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W Derate Above 25C @ TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current V(BR)CEO IC = 100mA, IB = 0 ICER ICEO Emitter Cutoff Current IEBO VCE = 120V, RBE = 1k VCE = 120V, RBE = 1k, TC = +150C VCE = 50V, IB = 0 VBE = 5V, IC = 0 120 - - - - - - - - - - 2 10 2 2 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain hFE VCE(sat) VBE(sat) IC = 25A, VCE = 5V IC = 50A, VCE = 5V Collector-Emitter Saturation Voltage IC = 25A, IB = 250mA IC = 50A, IB = 500mA Base-Emitter Saturation Voltage IC = 25A, IB = 200mA IC = 50A, IB = 300mA 1000 400 - - - - - - - - - - 18000 - 2.5 3.5 3.0 4.5 V V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Schematic Diagram C B B C E NPN PNP E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .061 (1.55) Max 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE2350
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